Invention Grant
US07887637B2 Method for cleaning treatment chamber in substrate treating apparatus and method for detecting endpoint of cleaning
失效
在基板处理装置中清洗处理室的方法和用于检测清洗终点的方法
- Patent Title: Method for cleaning treatment chamber in substrate treating apparatus and method for detecting endpoint of cleaning
- Patent Title (中): 在基板处理装置中清洗处理室的方法和用于检测清洗终点的方法
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Application No.: US10589511Application Date: 2005-02-17
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Publication No.: US07887637B2Publication Date: 2011-02-15
- Inventor: Shigenori Ozaki , Hideyuki Noguchi , Yoshiro Kabe , Kazuhiro Isa , Masaru Sasaki
- Applicant: Shigenori Ozaki , Hideyuki Noguchi , Yoshiro Kabe , Kazuhiro Isa , Masaru Sasaki
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2004-043449 20040219; JP2004-326316 20041110; JP2004-334552 20041118
- International Application: PCT/JP2005/002394 WO 20050217
- International Announcement: WO2005/081302 WO 20050901
- Main IPC: C25F1/00
- IPC: C25F1/00 ; C25F3/30 ; C25F5/00
Abstract:
In a substrate processing apparatus for performing a plasma process on a substrate including a tungsten-containing film, cleaning is performed for a process chamber. This cleaning includes, after the plasma process, supplying a gas containing O2 into the process chamber without setting the process chamber opened to the atmosphere, and generating plasma of the gas to clean the process chamber.
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