Invention Grant
- Patent Title: Method for atomic layer deposition of materials using an atmospheric pressure for semiconductor devices
- Patent Title (中): 用于半导体器件的大气压原子层沉积材料的方法
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Application No.: US11243735Application Date: 2005-10-04
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Publication No.: US07887884B2Publication Date: 2011-02-15
- Inventor: Fumitake Mieno
- Applicant: Fumitake Mieno
- Applicant Address: CN Shanghai
- Assignee: Semiconductor Manufacturing International (Shanghai) Corporation
- Current Assignee: Semiconductor Manufacturing International (Shanghai) Corporation
- Current Assignee Address: CN Shanghai
- Agency: Kilpatrick Townsend and Stockton LLP
- Priority: CN200510029998 20050920
- Main IPC: C23C16/00
- IPC: C23C16/00
Abstract:
A method for atomic layer deposition. The method includes providing a substrate having a surface region and exposing the surface region of the substrate to an atmospheric pressure. The method also maintains at least the substrate at about the atmospheric pressure and forms a film overlying the surface region using atomic layer deposition, while the substrate is maintained at about atmospheric pressure. Preferably, the film is grown at a rate of greater than about 1 nanometer per minute.
Public/Granted literature
- US20070077356A1 Method for atomic layer deposition of materials using an atmospheric pressure for semiconductor devices Public/Granted day:2007-04-05
Information query
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