Invention Grant
- Patent Title: Crystalline chromium deposit
- Patent Title (中): 结晶铬沉积物
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Application No.: US11692523Application Date: 2007-03-28
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Publication No.: US07887930B2Publication Date: 2011-02-15
- Inventor: Craig V. Bishop , Agnes Rousseau , Zoltan Mathe
- Applicant: Craig V. Bishop , Agnes Rousseau , Zoltan Mathe
- Applicant Address: DE Berlin
- Assignee: Atotech Deutschland GmbH
- Current Assignee: Atotech Deutschland GmbH
- Current Assignee Address: DE Berlin
- Agency: Renner, Otto, Boisselle & Sklar, LLP
- Main IPC: B32B15/01
- IPC: B32B15/01 ; C25D3/06

Abstract:
A crystalline chromium deposit having a lattice parameter of 2.8895+/−0.0025 Å, and an article including the crystalline chromium deposit. An article including a crystalline chromium deposit, wherein the crystalline chromium deposit has a {111} preferred orientation. A process for electrodepositing a crystalline chromium deposit on a substrate, including providing an electroplating bath comprising trivalent chromium and a source of divalent sulfur, and substantially free of hexavalent chromium; immersing a substrate in the electroplating bath; and applying an electrical current to deposit a crystalline chromium deposit on the substrate, wherein the chromium deposit is crystalline as deposited.
Public/Granted literature
- US20070227895A1 CRYSTALLINE CHROMIUM DEPOSIT Public/Granted day:2007-10-04
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