Invention Grant
US07887977B2 Exposure mask, its manufacture method, pattern transfer method, pattern forming method, and SRAM manufacture method
有权
曝光掩模，其制造方法，图案转印方法，图案形成方法和SRAM制造方法
- Patent Title: Exposure mask, its manufacture method, pattern transfer method, pattern forming method, and SRAM manufacture method
- Patent Title (中): 曝光掩模，其制造方法，图案转印方法，图案形成方法和SRAM制造方法
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Application No.: US12068694Application Date: 2008-02-11
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Publication No.: US07887977B2Publication Date: 2011-02-15
- Inventor: Fumitoshi Sugimoto
- Applicant: Fumitoshi Sugimoto
- Applicant Address: JP Yokohama
- Assignee: Fujitsu Semiconductor Limited
- Current Assignee: Fujitsu Semiconductor Limited
- Current Assignee Address: JP Yokohama
- Agency: Fujitsu Patent Center
- Main IPC: G03F1/00
- IPC: G03F1/00
Abstract:
A mask formed with a mask pattern is prepared, the mask pattern having a shape that a base pattern is divided into at least two partial patterns disposed at a space narrower than a resolution limit. A first relation is acquired between a width of the space separating the partial patterns and a size of a pattern on a substrate formed by transferring the mask pattern. The width of the space separating the partial patterns is determined in accordance with the size of a pattern to be formed on the substrate and the first relation. A mask pattern is formed having at least two separated partial patterns on a mask in accordance with the determined width of the space.
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