Invention Grant
- Patent Title: Method of manufacturing a photoelectronic device
- Patent Title (中): 制造光电器件的方法
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Application No.: US12511812Application Date: 2009-07-29
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Publication No.: US07888162B2Publication Date: 2011-02-15
- Inventor: Yu-Ling Chin , Li-Pin Jou , Yu-Chih Yang , Yu-Cheng Yang , Wei-Shou Chen , Cheng-Ta Kuo
- Applicant: Yu-Ling Chin , Li-Pin Jou , Yu-Chih Yang , Yu-Cheng Yang , Wei-Shou Chen , Cheng-Ta Kuo
- Applicant Address: TW Hsinchu
- Assignee: Epistar Corporation
- Current Assignee: Epistar Corporation
- Current Assignee Address: TW Hsinchu
- Agency: Muncy, Geissler, Olds & Lowe, PLLC
- Priority: TW97129154A 20080730
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/44

Abstract:
This application discloses a method of manufacturing a photoelectronic device comprising steps of providing a semiconductor stack layer, forming at least one metal adhesive on the semiconductor stack layer by a printing technology, forming an electrode by heating the metal adhesive to remove the solvent in the metal adhesive, wherein an ohmic contact is formed between the electrode and the semiconductor stack layer.
Public/Granted literature
- US20100029035A1 METHOD OF MANUFACTURING A PHOTOELECTRONIC DEVICE Public/Granted day:2010-02-04
Information query
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