Invention Grant
US07888225B2 Method of manufacturing an electronic device including a PNP bipolar transistor
有权
制造包括PNP双极晶体管的电子器件的方法
- Patent Title: Method of manufacturing an electronic device including a PNP bipolar transistor
- Patent Title (中): 制造包括PNP双极晶体管的电子器件的方法
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Application No.: US12390639Application Date: 2009-02-23
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Publication No.: US07888225B2Publication Date: 2011-02-15
- Inventor: Alfred Haeusler
- Applicant: Alfred Haeusler
- Applicant Address: DE Freising
- Assignee: Texas Instruments Deutschland GmbH
- Current Assignee: Texas Instruments Deutschland GmbH
- Current Assignee Address: DE Freising
- Agent Warren L. Franz; Wade J. Brady, III; Fredrick J. Telecky, Jr.
- Priority: DE102008010323 20080221
- Main IPC: H01L21/331
- IPC: H01L21/331
Abstract:
A method of manufacturing an electronic device including a PNP bipolar transistor comprises forming a collector in a substrate, depositing a base layer and an emitter layer on the substrate, and growing a nitride interface layer on the base layer as a base current modulation means, such that the nitride interface layer is arranged between the base layer and the emitter layer.
Public/Granted literature
- US20090212393A1 METHOD OF MANUFACTURING AN ELECTRONIC DEVICE INCLUDING A PNP BIPOLAR TRANSISTOR Public/Granted day:2009-08-27
Information query
IPC分类:
