Invention Grant
- Patent Title: Forming method of electrode and manufacturing method of semiconductor device
- Patent Title (中): 电极的形成方法和半导体器件的制造方法
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Application No.: US12143921Application Date: 2008-06-23
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Publication No.: US07888258B2Publication Date: 2011-02-15
- Inventor: Yoshito Akutagawa , Hiroyuki Matsui , Yutaka Makino
- Applicant: Yoshito Akutagawa , Hiroyuki Matsui , Yutaka Makino
- Applicant Address: JP Yokohama
- Assignee: Fujitsu Semiconductor Limited
- Current Assignee: Fujitsu Semiconductor Limited
- Current Assignee Address: JP Yokohama
- Agency: Fujitsu Patent Center
- Priority: JP2007-251411 20070927
- Main IPC: H01L21/44
- IPC: H01L21/44
Abstract:
A forming method of an electrode includes the steps of providing an electrode material on a conductive part; exposing the electrode material at a temperature equal to or higher than a melting point of the electrode material in an oxidizing atmosphere; and exposing the melted electrode material, in a reducing atmosphere, at a temperature equal to or higher than the melting point of the electrode material and lower than the temperature at which the electrode material is exposed in the oxidizing atmosphere.
Public/Granted literature
- US20090087984A1 FORMING METHOD OF ELECTRODE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE Public/Granted day:2009-04-02
Information query
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