Invention Grant
- Patent Title: Silicon-based photovoltaic cell and its red light conversion layer
- Patent Title (中): 硅基光伏电池及其红光转换层
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Application No.: US12124003Application Date: 2008-05-20
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Publication No.: US07888591B2Publication Date: 2011-02-15
- Inventor: Soshchin Naum , Wei-Hung Lo , Chi-Ruei Tsai
- Applicant: Soshchin Naum , Wei-Hung Lo , Chi-Ruei Tsai
- Applicant Address: TW Taipei
- Assignee: Yong-Chi Wang
- Current Assignee: Yong-Chi Wang
- Current Assignee Address: TW Taipei
- Agency: WPAT., P.C.
- Agent Justin King
- Priority: TW96118307A 20070523
- Main IPC: H01L31/00
- IPC: H01L31/00 ; H01L25/00

Abstract:
A silicon-based photovoltaic cell is disclosed having a red light conversion layer that absorbs ultraviolet rays, blue-purple or yellow-green light of the Sun's solar radiation and converts the absorption into a red, dark red and near infrared subband radiation. The maximum value of the solar radiation absorbed by the red light conversion layer is λ=470˜490 nm, and the maximum value of the photoluminescent spectrum of the red light conversion layer is within the photosensitive spectral zone of said single-crystal silicon substrate λ=700˜900 nm, i.e., in conformity with the optimal sensitivity area of silicon-based solar cells. The red light conversion layer has filled therein an ethyl acetoacetate or polycarbonate-based light-transmissive polymer that has evenly distributed therein a phosphor composed of α-Al2O3—Ti2O3, having a quantum efficiency of 90%.
Public/Granted literature
- US20090025792A1 Silicon-Based Photovoltaic Cell and Its Red Light Conversion Layer Public/Granted day:2009-01-29
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