Invention Grant
- Patent Title: Electron beam apparatus and method of manufacturing semiconductor device using the apparatus
- Patent Title (中): 电子束装置及使用该装置制造半导体器件的方法
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Application No.: US12188567Application Date: 2008-08-08
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Publication No.: US07888642B2Publication Date: 2011-02-15
- Inventor: Mamoru Nakasuji , Nabuharu Noji , Tohru Satake , Masahiro Hatakeyama , Kenji Watanabe , Takao Kato , Hirosi Sobukawa , Tsutomu Karimata , Shoji Yoshikawa , Toshifumi Kimba , Shin Oowada , Mutsumi Saito , Muneki Hamashima
- Applicant: Mamoru Nakasuji , Nabuharu Noji , Tohru Satake , Masahiro Hatakeyama , Kenji Watanabe , Takao Kato , Hirosi Sobukawa , Tsutomu Karimata , Shoji Yoshikawa , Toshifumi Kimba , Shin Oowada , Mutsumi Saito , Muneki Hamashima
- Applicant Address: JP Tokyo
- Assignee: Ebara Corporation
- Current Assignee: Ebara Corporation
- Current Assignee Address: JP Tokyo
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2000-378040 20001212; JP2000-388385 20001221; JP2001-3666 20010111; JP2001-5128 20010112; JP2001-17901 20010126; JP2001-21183 20010130; JP2001-23804 20010131; JP200126580 20010202; JP2001-31901 20010208; JP2001-31906 20010208; JP2001-33599 20010209; JP2001-44964 20010221; JP2001-52095 20010227; JP2001-73380 20010315; JP2001-131238 20010427; JP2001-158571 20010528
- Main IPC: H01J49/48
- IPC: H01J49/48 ; G21K5/04

Abstract:
The present invention provides an electron beam apparatus for irradiating a sample with primary electron beams to detect secondary electron beams generated from a surface of the sample by the irradiation for evaluating the sample surface. In the electron beam apparatus, an electron gun has a cathode for emitting primary electron beams. The cathode includes a plurality of emitters for emitting primary electron beams, arranged apart from one another on a circle centered at an optical axis of a primary electro-optical system. The plurality of emitters are arranged such that when the plurality of emitters are projected onto a straight line parallel with a direction in which the primary electron beams are scanned, resulting points on the straight line are spaced at equal intervals.
Public/Granted literature
- US20090039262A1 ELECTRON BEAM APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE APPARATUS Public/Granted day:2009-02-12
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