Invention Grant
- Patent Title: Common word line edge contact phase-change memory
- Patent Title (中): 通用字线边缘接触相变存储器
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Application No.: US11807622Application Date: 2007-05-29
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Publication No.: US07888666B2Publication Date: 2011-02-15
- Inventor: Hsiang-Lan Lung
- Applicant: Hsiang-Lan Lung
- Applicant Address: TW Hsinchu
- Assignee: Macronix International Co., Ltd.
- Current Assignee: Macronix International Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Stout, Uxa, Buyan & Mullins, LLP
- Main IPC: H01L29/02
- IPC: H01L29/02
Abstract:
The cross-sectional area of a contact with a phase-change memory element within the cell is controlled by a first dimension of a bottom electrode and a second dimension controlled by an etch process. The contact area is a product of the first dimension and the second dimension. The method allows the formation of very small phase-change memory cells.
Public/Granted literature
- US20070236989A1 Common word line edge contact phase-change memory Public/Granted day:2007-10-11
Information query
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