Invention Grant
- Patent Title: Nitride/zinc oxide based light-emitting diodes
- Patent Title (中): 氮化物/氧化锌基发光二极管
-
Application No.: US12060633Application Date: 2008-04-01
-
Publication No.: US07888669B2Publication Date: 2011-02-15
- Inventor: Gon Namkoong , William Alan Doolittle
- Applicant: Gon Namkoong , William Alan Doolittle
- Applicant Address: US GA Atlanta
- Assignee: Georgia Tech Research Corporation
- Current Assignee: Georgia Tech Research Corporation
- Current Assignee Address: US GA Atlanta
- Agency: Troutman Sanders LLP
- Agent Ryan A. Schneider, Esq.
- Main IPC: H01L29/36
- IPC: H01L29/36 ; H01L33/26
Abstract:
A light-emitting nitride/zinc oxide based compound semiconductor device of double heterostructure. The double-heterostructure includes a light-emitting layer formed of an Al1-x-yInxGayN; 0≦x
Public/Granted literature
- US20080179587A1 NITRIDE/ZINC OXIDE BASED LIGHT-EMITTING DIODES Public/Granted day:2008-07-31
Information query
IPC分类:
