Provided is a monitoring pattern for a silicide that may include a plurality of poly pads, a plurality of N-well regions and P-well regions, active regions, and a poly gate line. The plurality of poly pads are disposed on a semiconductor substrate. The plurality of N-well regions and P-well regions are disposed in a single line between the poly pads. The active regions are disposed on the N-well and the P-well regions. The poly gate line electrically connects the active regions to the poly pads and has a configuration permitting it to pass through the active regions a plurality of times.