Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US12136984Application Date: 2008-06-11
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Publication No.: US07888680B2Publication Date: 2011-02-15
- Inventor: Minoru Watanabe , Noriyuki Kaifu , Chiori Mochizuki
- Applicant: Minoru Watanabe , Noriyuki Kaifu , Chiori Mochizuki
- Applicant Address: JP Tokyo
- Assignee: Canon Kabushiki Kaisha
- Current Assignee: Canon Kabushiki Kaisha
- Current Assignee Address: JP Tokyo
- Agency: Fitzpatrick, Cella, Harper & Scinto
- Priority: JP10-246151 19980831; JP11-235770 19990823
- Main IPC: H01L27/14
- IPC: H01L27/14
Abstract:
In a semiconductor device having a plurality of thin film transistors and matrix wiring lines formed on a substrate, the matrix wiring lines are electrically connected via resistors in order to prevent electrostatic destructions during a panel manufacture process and improve a manufacture yield.
Public/Granted literature
- US20090001379A1 SEMICONDUCTOR DEVICE Public/Granted day:2009-01-01
Information query
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