Invention Grant
US07888684B2 Light emitting device and method of producing light emitting device with a semiconductor includes one of chalcopyrite and oxychacogenide
有权
具有半导体的发光器件和发光器件的制造方法包括黄铜矿和含氧基金属盐之一
- Patent Title: Light emitting device and method of producing light emitting device with a semiconductor includes one of chalcopyrite and oxychacogenide
- Patent Title (中): 具有半导体的发光器件和发光器件的制造方法包括黄铜矿和含氧基金属盐之一
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Application No.: US12162924Application Date: 2007-03-15
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Publication No.: US07888684B2Publication Date: 2011-02-15
- Inventor: Tomoyuki Oike , Tatsuya Iwasaki , Toru Den
- Applicant: Tomoyuki Oike , Tatsuya Iwasaki , Toru Den
- Applicant Address: JP Tokyo
- Assignee: Canon Kabushiki Kaisha
- Current Assignee: Canon Kabushiki Kaisha
- Current Assignee Address: JP Tokyo
- Agency: Fitzpatrick, Cella, Harper & Scinto
- Priority: JP2006-074626 20060317; JP2007-061869 20070312
- International Application: PCT/JP2007/055936 WO 20070315
- International Announcement: WO2007/108526 WO 20070927
- Main IPC: H01L31/0256
- IPC: H01L31/0256 ; H01L33/00
Abstract:
There has not been a DC drive type light emitting device capable of providing high brightness. The present invention provides a light emitting device, including: a pair of electrodes; a light emitter placed between the electrodes; and a semiconductor laminated to be adjacent to the light emitter, in which the semiconductor contains one of a chalcopyrite and an oxychalcogenide.
Public/Granted literature
- US20090134427A1 LIGHT EMITTING DEVICE AND METHOD OF PRODUCING LIGHT EMITTING DEVICE Public/Granted day:2009-05-28
Information query
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