Invention Grant
- Patent Title: High purity silicon carbide structures
- Patent Title (中): 高纯碳化硅结构
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Application No.: US10900938Application Date: 2004-07-27
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Publication No.: US07888685B2Publication Date: 2011-02-15
- Inventor: Larry Wayne Shive , Brian Lawrence Gilmore
- Applicant: Larry Wayne Shive , Brian Lawrence Gilmore
- Applicant Address: US MO St. Peters
- Assignee: MEMC Electronic Materials, Inc.
- Current Assignee: MEMC Electronic Materials, Inc.
- Current Assignee Address: US MO St. Peters
- Agency: Armstrong Teasdale LLP
- Main IPC: H01L29/15
- IPC: H01L29/15
Abstract:
Processes for the purification of silicon carbide structures, including silicon carbide coated silicon carbide structures, are disclosed. The processes described can reduce the amount of iron contamination in a silicon carbide structure by 100 to 1000 times. After purification, the silicon carbide structures are suitable for use in high temperature silicon wafer processing.
Public/Granted literature
- US20060024969A1 Method for purifying silicon carbide coated structures Public/Granted day:2006-02-02
Information query
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