Invention Grant
- Patent Title: Capacitor for semiconductor device
- Patent Title (中): 半导体器件用电容器
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Application No.: US12195884Application Date: 2008-08-21
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Publication No.: US07888726B2Publication Date: 2011-02-15
- Inventor: Toshiyuki Hirota , Masami Tanioku
- Applicant: Toshiyuki Hirota , Masami Tanioku
- Applicant Address: JP Tokyo
- Assignee: Elpida Memory, Inc.
- Current Assignee: Elpida Memory, Inc.
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2007-225765 20070831
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L21/8242
Abstract:
A capacitor for a semiconductor device having a dielectric film between an upper electrode and a lower electrode is featured in that the dielectric film includes an alternately laminated film of hafnium oxide and titanium oxide at an atomic layer level.
Public/Granted literature
- US20090057738A1 CAPACITOR FOR SEMICONDUCTOR DEVICE Public/Granted day:2009-03-05
Information query
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