Invention Grant
- Patent Title: Semiconductor device having a fin field effect transistor
- Patent Title (中): 具有鳍场效应晶体管的半导体器件
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Application No.: US12423287Application Date: 2009-04-14
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Publication No.: US07888751B2Publication Date: 2011-02-15
- Inventor: Ken Sawada
- Applicant: Ken Sawada
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: SNR Denton US LLP
- Priority: JP2008-107072 20080416
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/94 ; H01L31/062 ; H01L31/113 ; H01L31/119
Abstract:
A semiconductor device includes a fin field effect transistor configured to include at least a first fin and a second fin. Threshold voltage of the first fin and threshold voltage of the second fin are different from each other in the fin field effect transistor.
Public/Granted literature
- US20090261423A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME Public/Granted day:2009-10-22
Information query
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