Invention Grant
US07888757B2 Magnetic random access memory (MRAM) device on thermally-sensitive substrate
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热敏基片上的磁性随机存取存储器（MRAM）器件
- Patent Title: Magnetic random access memory (MRAM) device on thermally-sensitive substrate
- Patent Title (中): 热敏基片上的磁性随机存取存储器（MRAM）器件
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Application No.: US11923874Application Date: 2007-10-25
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Publication No.: US07888757B2Publication Date: 2011-02-15
- Inventor: Arunava Gupta
- Applicant: Arunava Gupta
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: McGinn IP Law Group, PLLC
- Agent Vazken Alexanian
- Main IPC: H01L29/82
- IPC: H01L29/82 ; H01L43/00
Abstract:
A method of forming a magnetic memory device (and a resulting structure) on a low-temperature substrate, includes forming the memory device on a transparent substrate coated with a decomposable material layer subject to rapid heating resulting in a predetermined high pressure, and transferring the memory device to the low-temperature substrate.
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