Invention Grant
US07888758B2 Method of forming a permanent carrier and spacer wafer for wafer level optics and associated structure
有权
形成用于晶片级光学器件和相关结构的永久载体和间隔晶片的方法
- Patent Title: Method of forming a permanent carrier and spacer wafer for wafer level optics and associated structure
- Patent Title (中): 形成用于晶片级光学器件和相关结构的永久载体和间隔晶片的方法
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Application No.: US12073998Application Date: 2008-03-12
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Publication No.: US07888758B2Publication Date: 2011-02-15
- Inventor: Rickie C. Lake
- Applicant: Rickie C. Lake
- Applicant Address: KY George Town
- Assignee: Aptina Imaging Corporation
- Current Assignee: Aptina Imaging Corporation
- Current Assignee Address: KY George Town
- Main IPC: H01L31/00
- IPC: H01L31/00
Abstract:
A carrier wafer for wafer level fabrication of imager structures comprising a substrate with trenches corresponding to locations of imager arrays on an imager wafer. A method of fabricating such a carrier wafer and a method of fabricating an imager module employing such a carrier wafer are also provided.
Public/Granted literature
- US20090231826A1 Method of forming a permanent carrier and spacer wafer for wafer level optics and associated structure Public/Granted day:2009-09-17
Information query
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