Invention Grant
US07888759B2 Photoelectric conversion device, imaging device, and process for producing the photoelectric conversion device 有权
光电转换装置,成像装置以及光电转换装置的制造方法

  • Patent Title: Photoelectric conversion device, imaging device, and process for producing the photoelectric conversion device
  • Patent Title (中): 光电转换装置,成像装置以及光电转换装置的制造方法
  • Application No.: US11508174
    Application Date: 2006-08-23
  • Publication No.: US07888759B2
    Publication Date: 2011-02-15
  • Inventor: Mikio Ihama
  • Applicant: Mikio Ihama
  • Applicant Address: JP Tokyo
  • Assignee: Fujifilm Corporation
  • Current Assignee: Fujifilm Corporation
  • Current Assignee Address: JP Tokyo
  • Agency: Sughrue Mion, PLLC
  • Priority: JPP2005-240965 20050823
  • Main IPC: H01L27/146
  • IPC: H01L27/146
Photoelectric conversion device, imaging device, and process for producing the photoelectric conversion device
Abstract:
A photoelectric conversion device comprising: a semiconductor substrate; an inorganic photoelectric conversion layer provided within the semiconductor substrate; and an organic photoelectric conversion layer provided above the inorganic photoelectric conversion layer, wherein the organic photoelectric conversion layer is prepared by a shadow mask method.
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