Invention Grant
US07888763B2 Backside illuminated imaging sensor with improved infrared sensitivity
有权
背面照明成像传感器，具有改善的红外灵敏度
- Patent Title: Backside illuminated imaging sensor with improved infrared sensitivity
- Patent Title (中): 背面照明成像传感器，具有改善的红外灵敏度
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Application No.: US12203858Application Date: 2008-09-03
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Publication No.: US07888763B2Publication Date: 2011-02-15
- Inventor: Yin Qian , Howard E. Rhodes , Hsin-Chih Tai , Vincent Venezia , Duli Mao
- Applicant: Yin Qian , Howard E. Rhodes , Hsin-Chih Tai , Vincent Venezia , Duli Mao
- Applicant Address: US CA Santa Clara
- Assignee: OmniVision Technologies, Inc.
- Current Assignee: OmniVision Technologies, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman, LLP
- Main IPC: H01L31/00
- IPC: H01L31/00 ; H01L21/00
Abstract:
A backside illuminated imaging sensor includes a semiconductor layer and an infrared detecting layer. The semiconductor layer has a front surface and a back surface. An imaging pixel includes a photodiode region formed within the semiconductor layer. The infrared detecting layer is disposed above the front surface of the semiconductor layer to receive infrared light that propagates through the imaging sensor from the back surface of the semiconductor layer.
Public/Granted literature
- US20090200589A1 BACKSIDE ILLUMINATED IMAGING SENSOR WITH IMPROVED INFRARED SENSITIVITY Public/Granted day:2009-08-13
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