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US07888764B2 Three-dimensional integrated circuit structure 有权
三维集成电路结构

  • Patent Title: Three-dimensional integrated circuit structure
  • Patent Title (中): 三维集成电路结构
  • Application No.: US11606523
    Application Date: 2006-11-30
  • Publication No.: US07888764B2
    Publication Date: 2011-02-15
  • Inventor: Sang-Yun Lee
  • Applicant: Sang-Yun Lee
  • Agency: Schmeiser Olsen & Watts LLP
  • Priority: KR10-2003-0040920 20030624; KR10-2003-0047515 20030712
  • Main IPC: H01L31/06
  • IPC: H01L31/06
Three-dimensional integrated circuit structure
Abstract:
A semiconductor structure includes an interconnect region and a semiconductor stack bonded to the interconnect region through a bonding region. The stack includes at least two semiconductor layers having different electrical properties. The stack also includes single crystalline semiconductor material. The stack can be processed to form a mesa structure and the mesa structure can be processed to from a vertically oriented semiconductor device.
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