Invention Grant
US07888775B2 Vertical diode using silicon formed by selective epitaxial growth
有权
使用通过选择性外延生长形成的硅的垂直二极管
- Patent Title: Vertical diode using silicon formed by selective epitaxial growth
- Patent Title (中): 使用通过选择性外延生长形成的硅的垂直二极管
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Application No.: US11862964Application Date: 2007-09-27
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Publication No.: US07888775B2Publication Date: 2011-02-15
- Inventor: Christian Russ , Christian Pacha , Snezana Jenei , Klaus Schruefer
- Applicant: Christian Russ , Christian Pacha , Snezana Jenei , Klaus Schruefer
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Schwegman Lundberg & Woessner, P.A.
- Main IPC: H01L27/08
- IPC: H01L27/08
Abstract:
Some embodiments relate to an apparatus that exhibits vertical diode activity to occur between a semiconductive body and an epitaxial film that is disposed over a doping region of the semiconductive body. Some embodiments include an apparatus that causes both vertical and lateral diode activity. Some embodiments include a gated vertical diode for a finned semiconductor apparatus. Process embodiments include the formation of vertical-diode apparatus.
Public/Granted literature
- US20090085163A1 VERTICAL DIODE USING SILICON FORMED BY SELECTIVE EPITAXIAL GROWTH Public/Granted day:2009-04-02
Information query
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