Invention Grant
- Patent Title: Semiconductor device and producing method of the same
- Patent Title (中): 半导体器件及其制造方法
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Application No.: US12207288Application Date: 2008-09-09
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Publication No.: US07888778B2Publication Date: 2011-02-15
- Inventor: Kazumasa Tanida , Masahiro Sekiguchi , Ninao Sato , Kenji Takahashi
- Applicant: Kazumasa Tanida , Masahiro Sekiguchi , Ninao Sato , Kenji Takahashi
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Turocy & Watson, LLP
- Priority: JPP2007-236637 20070912
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L21/4763
Abstract:
A semiconductor device includes a semiconductor substrate having a through hole. An active layer is formed on a first surface of the semiconductor substrate. An inner wall surface of the through hole, a bottom surface of the through hole closed by the active layer and a second surface of the semiconductor substrate are covered with an insulating layer. A first opening is formed in the insulating layer which is present on the bottom surface of the through hole. A second opening is formed in the insulating layer which is present on the second surface of the semiconductor substrate. A first wiring layer is formed from within the through hole onto the second surface of the semiconductor substrate. A second wiring layer is formed to connect to the second surface through the second opening.
Public/Granted literature
- US20090065906A1 SEMICONDUCTOR DEVICE AND PRODUCING METHOD OF THE SAME Public/Granted day:2009-03-12
Information query
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