Invention Grant
- Patent Title: Bonding pad structure and manufacturing method thereof
- Patent Title (中): 接合垫结构及其制造方法
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Application No.: US12608018Application Date: 2009-10-29
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Publication No.: US07888802B2Publication Date: 2011-02-15
- Inventor: Kyoung-Hwan Kim
- Applicant: Kyoung-Hwan Kim
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2008-0129274 20081218
- Main IPC: H01L23/488
- IPC: H01L23/488

Abstract:
A bonding pad structure of a semiconductor device and a method of manufacturing the same reduce the likelihood of peel-off defects from occurring. The bonding pad structure includes a substrate, an interlayer insulation layer on the substrate, an upper wiring layer on the interlayer insulation layer, and a plurality of lower wiring layers disposed in the interlayer insulation layer between the upper wiring layer and the substrate and configured to prevent the interlayer insulation layer from cracking especially during a wire bonding process in which a wire is bonded to the upper wiring layer. For example, the respective areas occupied by the lower wiring layers sequentially increase in the interlayer insulation layer in a downward direction from the upper wiring layer towards the substrate. Also, each of the lower wiring layers may project further inwardly toward a central part of the bonding pad than the lower layer of wiring disposed above it in the interlayer insulation layer.
Public/Granted literature
- US20100155958A1 BONDING PAD STRUCTURE AND MANUFACTURING METHOD THEREOF Public/Granted day:2010-06-24
Information query
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