Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12588643Application Date: 2009-10-22
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Publication No.: US07888809B2Publication Date: 2011-02-15
- Inventor: Yuichi Miyagawa , Takamitsu Noda , Hiroyasu Miyamoto , Jun Tsukano
- Applicant: Yuichi Miyagawa , Takamitsu Noda , Hiroyasu Miyamoto , Jun Tsukano
- Applicant Address: JP Kawasaki-shi, Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi, Kanagawa
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2008-277271 20081028
- Main IPC: H01L23/29
- IPC: H01L23/29
Abstract:
A semiconductor device including a substrate, a semiconductor chip mounted on the substrate, and an encapsulation resin encapsulating the semiconductor chip, wherein the encapsulation resin contains a first resin region composed of a first resin composition, a second resin region composed of a second resin composition, and a mixed layer formed between the first resin region and the second resin region so as to have the first resin composition and the second resin composition mixed therein is provided.
Public/Granted literature
- US20100102461A1 Semiconductor device and method of manufacturing the same Public/Granted day:2010-04-29
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