Invention Grant
- Patent Title: Power amplifier
- Patent Title (中): 功率放大器
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Application No.: US12446150Application Date: 2007-10-18
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Publication No.: US07889002B2Publication Date: 2011-02-15
- Inventor: Marco Berkhout
- Applicant: Marco Berkhout
- Applicant Address: NL Eindhoven
- Assignee: NXP B.V.
- Current Assignee: NXP B.V.
- Current Assignee Address: NL Eindhoven
- Priority: EP06122677 20061020; WOPCT/IB2007/054242 20071018
- International Application: PCT/IB2007/054242 WO 20071018
- International Announcement: WO2008/047323 WO 20080424
- Main IPC: H03F3/217
- IPC: H03F3/217

Abstract:
The invention refers to a power amplifier comprising a first transistor (MH) having a first main channel coupled between a positive power supply terminal (Vdd) and an output terminal (Vout), said first transistor having a control terminal driven by a first gate signal (Vgatehigh) provided by a high driver circuit, which is biased from a first voltage terminal (Vboot). The power amplifier further comprises a second transistor (ML) having a second main channel coupled between the output terminal and a negative power supply terminal (Vss), said second transistor having a second control terminal driven by a second gate signal (Vgatelow) provided by a low driver circuit, which is biased from a second voltage terminal (Vreg), and a switch circuit (10) coupled between the first voltage terminal (Vboot) and the second voltage terminal (Vreg), said switch circuit being controlled by the second gate Signal (Vgatelow).
Public/Granted literature
- US20100321111A1 POWER AMPLIFIER Public/Granted day:2010-12-23
Information query
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