Invention Grant
- Patent Title: Electrostatic discharge protection circuit for protecting semiconductor device
- Patent Title (中): 用于保护半导体器件的静电放电保护电路
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Application No.: US12236045Application Date: 2008-09-23
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Publication No.: US07889469B2Publication Date: 2011-02-15
- Inventor: Kentaro Watanabe
- Applicant: Kentaro Watanabe
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Turocy & Watson, LLP
- Priority: JP2007-250133 20070926
- Main IPC: H02H3/22
- IPC: H02H3/22

Abstract:
A discharge circuit holds the potential difference between a power supply terminal and reference potential terminal at a predetermined value. The gates of a first pMOSFET and first nMOSFET are connected to an input terminal. A second pMOSFET is connected between the first pMOSFET and power supply terminal, and has a gate to which a first signal is supplied. A second nMOSFET is connected between the first nMOSFET and reference potential terminal, and has a gate to which a second signal is supplied. A detection circuit outputs the first signal which turns on the second pMOSFET and the second signal which turns on the second nMOSFET, while the potential difference is held at the predetermined value. The detection circuit outputs the first signal which turns off the second pMOSFET and the second signal which turns off the second nMOSFET, while the potential difference deviates from the predetermined value.
Public/Granted literature
- US20090086393A1 ELECTROSTATIC DISCHARGE PROTECTION CIRCUIT FOR PROTECTING SEMICONDUCTOR DEVICE Public/Granted day:2009-04-02
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