Invention Grant
US07889548B2 Method for reducing a reset current for resetting a portion of a phase change material in a memory cell of a phase change memory device and the phase change memory device
有权
减少用于复位相变存储器件和相变存储器件的存储单元中的相变材料的一部分的复位电流的方法
- Patent Title: Method for reducing a reset current for resetting a portion of a phase change material in a memory cell of a phase change memory device and the phase change memory device
- Patent Title (中): 减少用于复位相变存储器件和相变存储器件的存储单元中的相变材料的一部分的复位电流的方法
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Application No.: US12585637Application Date: 2009-09-21
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Publication No.: US07889548B2Publication Date: 2011-02-15
- Inventor: Chang-Wook Jeong , Jun-Hyok Kong , Ji-Hye Yi , Beak-Hyung Cho
- Applicant: Chang-Wook Jeong , Jun-Hyok Kong , Ji-Hye Yi , Beak-Hyung Cho
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR2003-62546 20030908
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
According to one embodiment, at least a portion of the phase change material including a first crystalline phase is converted to one of a second crystalline phase and an amorphous phase. The second crystalline phase transitions to the amorphous phase more easily than the first crystalline phase. For example, the first crystalline phase may be a hexagonal closed packed structure, and the first crystalline phase may be a face centered cubic structure.
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