Invention Grant
US07889551B2 Page buffer of non-volatile memory device and programming method of non-volatile memory device
有权
非易失性存储器件的页面缓冲器和非易失性存储器件的编程方法
- Patent Title: Page buffer of non-volatile memory device and programming method of non-volatile memory device
- Patent Title (中): 非易失性存储器件的页面缓冲器和非易失性存储器件的编程方法
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Application No.: US12130962Application Date: 2008-05-30
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Publication No.: US07889551B2Publication Date: 2011-02-15
- Inventor: Chang Won Yang , Jong Hyun Wang , Se Chun Park
- Applicant: Chang Won Yang , Jong Hyun Wang , Se Chun Park
- Applicant Address: KR Icheon-si
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Icheon-si
- Agency: Kilpatrick Townsend & Stockton LLP
- Priority: KR10-2007-136365 20071224
- Main IPC: G11C16/04
- IPC: G11C16/04
Abstract:
A page buffer includes a first register, a second register and a data I/O unit. The first register temporarily stores data to be programmed into cells included in a first memory cell block group, or reads and stores data of a corresponding memory cell. The second register temporarily stores data to be programmed into cells included in a second memory cell block group, or reads and stores data of a corresponding memory cell. The data I/O unit inputs specific data to the first register and the second register, or outputs data stored in the first register and the second register.
Public/Granted literature
- US20090161443A1 PAGE BUFFER OF NON-VOLATILE MEMORY DEVICE AND PROGRAMMING METHOD OF NON-VOLATILE MEMORY DEVICE Public/Granted day:2009-06-25
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