Invention Grant
US07889557B2 NAND flash memory device with increased spacing between selection transistors and adjacent memory cells
有权
NAND闪存器件在选择晶体管和相邻存储器单元之间具有增加的间隔
- Patent Title: NAND flash memory device with increased spacing between selection transistors and adjacent memory cells
- Patent Title (中): NAND闪存器件在选择晶体管和相邻存储器单元之间具有增加的间隔
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Application No.: US11315395Application Date: 2005-12-21
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Publication No.: US07889557B2Publication Date: 2011-02-15
- Inventor: Hee Sik Park , Keon Soo Shim , Jong Soon Leem
- Applicant: Hee Sik Park , Keon Soo Shim , Jong Soon Leem
- Applicant Address: KR Icheon-si
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Icheon-si
- Agency: Kilpatrick Townsend & Stockton LLP
- Priority: KR10-2004-0114223 20041228; KR10-2005-0058020 20050630; KR10-2005-0063716 20050714
- Main IPC: G11C16/04
- IPC: G11C16/04 ; H01L21/70
Abstract:
A memory device capable of enlarging an interval between a source selection transistor and a memory cell adjacent to the source selection transistor, enlarging an interval between a drain selection transistor and a memory cell adjacent to the drain selection transistor, or enlarging the intervals between the source selection transistor and the memory cell adjacent to the source selection transistor and between the drain selection transistor and the memory cell adjacent to the drain selection transistor, prevents the memory cell adjacent to the source or drain selection transistor from being degraded in programming speed due to program disturbance.
Public/Granted literature
- US20060138563A1 Nand flash memory device Public/Granted day:2006-06-29
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