Invention Grant
US07889559B2 Circuit for generating a voltage and a non-volatile memory device having the same
有权
用于产生电压的电路和具有该电路的非易失性存储器件
- Patent Title: Circuit for generating a voltage and a non-volatile memory device having the same
- Patent Title (中): 用于产生电压的电路和具有该电路的非易失性存储器件
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Application No.: US12410414Application Date: 2009-03-24
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Publication No.: US07889559B2Publication Date: 2011-02-15
- Inventor: Seok Joo Lee
- Applicant: Seok Joo Lee
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2008-0049628 20080528
- Main IPC: G11C16/04
- IPC: G11C16/04

Abstract:
A circuit for providing a voltage, which includes a first voltage generating circuit to output a first voltage generated by dividing an input voltage on the basis of resistance rate varied in accordance with a first control signal, a second voltage generating circuit to output a third voltage by using a second voltage, where the third voltage is shifted in accordance with a temperature, a third voltage generating circuit to change the third voltage by using a voltage shift rate set in accordance with a level of an operation voltage to be outputted at the temperature, thereby outputting a fourth voltage, and a comparison amplifying circuit configured to output the operation voltage in accordance with the first voltage, the fourth voltage and resistance rate.
Public/Granted literature
- US20090296480A1 CIRCUIT FOR GENERATING A VOLTAGE AND A NON-VOLATILE MEMORY DEVICE HAVING THE SAME Public/Granted day:2009-12-03
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