Invention Grant
US07889559B2 Circuit for generating a voltage and a non-volatile memory device having the same 有权
用于产生电压的电路和具有该电路的非易失性存储器件

  • Patent Title: Circuit for generating a voltage and a non-volatile memory device having the same
  • Patent Title (中): 用于产生电压的电路和具有该电路的非易失性存储器件
  • Application No.: US12410414
    Application Date: 2009-03-24
  • Publication No.: US07889559B2
    Publication Date: 2011-02-15
  • Inventor: Seok Joo Lee
  • Applicant: Seok Joo Lee
  • Applicant Address: KR Gyeonggi-do
  • Assignee: Hynix Semiconductor Inc.
  • Current Assignee: Hynix Semiconductor Inc.
  • Current Assignee Address: KR Gyeonggi-do
  • Agency: IP & T Group LLP
  • Priority: KR10-2008-0049628 20080528
  • Main IPC: G11C16/04
  • IPC: G11C16/04
Circuit for generating a voltage and a non-volatile memory device having the same
Abstract:
A circuit for providing a voltage, which includes a first voltage generating circuit to output a first voltage generated by dividing an input voltage on the basis of resistance rate varied in accordance with a first control signal, a second voltage generating circuit to output a third voltage by using a second voltage, where the third voltage is shifted in accordance with a temperature, a third voltage generating circuit to change the third voltage by using a voltage shift rate set in accordance with a level of an operation voltage to be outputted at the temperature, thereby outputting a fourth voltage, and a comparison amplifying circuit configured to output the operation voltage in accordance with the first voltage, the fourth voltage and resistance rate.
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