Invention Grant
US07889566B2 Flash memory device, programming method thereof and memory system including the same
有权
闪速存储器件，其编程方法和包括其的存储器系统
- Patent Title: Flash memory device, programming method thereof and memory system including the same
- Patent Title (中): 闪速存储器件，其编程方法和包括其的存储器系统
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Application No.: US12466616Application Date: 2009-05-15
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Publication No.: US07889566B2Publication Date: 2011-02-15
- Inventor: Sang-ku Kang
- Applicant: Sang-ku Kang
- Applicant Address: KR Yeongtong-gu, Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Yeongtong-gu, Suwon-si, Gyeonggi-do
- Agency: Muir Patent Consulting, PLLC
- Priority: KR10-2008-0044848 20080515
- Main IPC: G11C16/06
- IPC: G11C16/06
Abstract:
A verify voltage may be changed into a plurality of voltage levels based upon a logic state of each of the memory cells and characteristics or logic states of other memory cells (e.g., adjacent) to each of the memory cells.
Public/Granted literature
- US20090285024A1 FLASH MEMORY DEVICE, PROGRAMMING METHOD THEREOF AND MEMORY SYSTEM INCLUDING THE SAME Public/Granted day:2009-11-19
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