Invention Grant
- Patent Title: Memory with high reading performance and reading method thereof
- Patent Title (中): 具有高读取性能的记忆体及其阅读方法
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Application No.: US12204009Application Date: 2008-09-04
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Publication No.: US07889572B2Publication Date: 2011-02-15
- Inventor: Wen-Chiao Ho , Chin-Hung Chang , Kuen-Long Chang , Chun-Hsiung Hung
- Applicant: Wen-Chiao Ho , Chin-Hung Chang , Kuen-Long Chang , Chun-Hsiung Hung
- Applicant Address: TW Hsinchu
- Assignee: Macronix International Co., Ltd.
- Current Assignee: Macronix International Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Thomas, Kayden, Horstemeyer & Risley
- Main IPC: G11C7/00
- IPC: G11C7/00
Abstract:
A memory includes many memory regions each including a target memory cell, a source line, a bit line and a reading control circuit. The source line is coupled to a first terminal of the target memory cell. The bit line is coupled to a second terminal of the target memory cell. The reading control circuit is for selectively applying a working voltage to the source line.
Public/Granted literature
- US20100054045A1 Memory and Reading Method Thereof Public/Granted day:2010-03-04
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