Invention Grant
- Patent Title: On-chip bias voltage temperature coefficient self-calibration mechanism
- Patent Title (中): 片上偏置电压温度系数自校准机制
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Application No.: US12235474Application Date: 2008-09-22
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Publication No.: US07889575B2Publication Date: 2011-02-15
- Inventor: Yuxin Wang , Feng Pan , Byungki Woo , Trung Pham , Khin Htoo
- Applicant: Yuxin Wang , Feng Pan , Byungki Woo , Trung Pham , Khin Htoo
- Applicant Address: US CA Milpitas
- Assignee: SanDisk Corporation
- Current Assignee: SanDisk Corporation
- Current Assignee Address: US CA Milpitas
- Agency: Davis Wright Tremaine LLP
- Main IPC: G11C5/14
- IPC: G11C5/14

Abstract:
Techniques and corresponding circuitry for deriving a supply a bias voltage for a memory cell array from a received reference voltage is presented. The circuit includes a voltage determination circuit, which is connected to receive the reference voltage and generate from it the bias voltage, a temperature sensing circuit, and a calibration circuit. The calibration circuit is connected to receive the bias voltage and to receive a temperature indication from the temperature sensing circuit and determine from the bias voltage and temperature indication a compensation factor that is supplied to the voltage determination circuit, which adjusts the bias voltage based upon the compensation factor.
Public/Granted literature
- US20100073069A1 On-Chip Bias Voltage Temperature Coefficient Self-Calibration Mechanism Public/Granted day:2010-03-25
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