Invention Grant
US07889589B2 Memory including periphery circuitry to support a portion or all of the multiple banks of memory cells
有权
存储器包括用于支持多组存储单元的一部分或全部的外围电路
- Patent Title: Memory including periphery circuitry to support a portion or all of the multiple banks of memory cells
- Patent Title (中): 存储器包括用于支持多组存储单元的一部分或全部的外围电路
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Application No.: US12053913Application Date: 2008-03-24
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Publication No.: US07889589B2Publication Date: 2011-02-15
- Inventor: Steffen Loeffler , Wolfgang Hokenmaier
- Applicant: Steffen Loeffler , Wolfgang Hokenmaier
- Applicant Address: DE München
- Assignee: Qimonda AG
- Current Assignee: Qimonda AG
- Current Assignee Address: DE München
- Agency: Coats & Bennett PPLC
- Main IPC: G11C8/00
- IPC: G11C8/00
Abstract:
A memory including periphery circuitry configured to support multiple banks of memory cells. The periphery circuitry includes switches that are set to put the periphery circuitry into a first mode to support a portion of the multiple banks of memory cells and a second mode to support all of the multiple banks of memory cells.
Public/Granted literature
- US20090237972A1 MEMORY INCLUDING PERIPHERY CIRCUITRY TO SUPPORT A PORTION OR ALL OF THE MULTIPLE BANKS OF MEMORY CELLS Public/Granted day:2009-09-24
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