Invention Grant
- Patent Title: High-power semiconductor laser
- Patent Title (中): 大功率半导体激光器
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Application No.: US10597300Application Date: 2005-01-21
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Publication No.: US07889776B2Publication Date: 2011-02-15
- Inventor: Greg Charache , John Charles Connolly , Holger Schlüter , Claus Schnitzler
- Applicant: Greg Charache , John Charles Connolly , Holger Schlüter , Claus Schnitzler
- Applicant Address: US NJ Cranbury
- Assignee: Trumpf Photonics Inc.
- Current Assignee: Trumpf Photonics Inc.
- Current Assignee Address: US NJ Cranbury
- Agency: Fish & Richardson P.C.
- International Application: PCT/US2005/001891 WO 20050121
- International Announcement: WO2006/025849 WO 20060309
- Main IPC: H01S3/08
- IPC: H01S3/08
Abstract:
A light source includes a semiconductor laser diode and a narrow spectral and spatial bandwidth reflector in optical communication with respect to the semiconductor diode laser and aligned with the output beam of the diode laser, such that a portion of the light in the output beam is reflected back into the laser.
Public/Granted literature
- US20080253421A1 High-Power Semiconductor Laser Public/Granted day:2008-10-16
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