Invention Grant
US07890063B2 Systems, methods, and apparatuses for complementary metal oxide semiconductor (CMOS) antenna switches using body switching in multistacking structure
有权
在多层结构中使用身体切换的互补金属氧化物半导体(CMOS)天线开关的系统,方法和装置
- Patent Title: Systems, methods, and apparatuses for complementary metal oxide semiconductor (CMOS) antenna switches using body switching in multistacking structure
- Patent Title (中): 在多层结构中使用身体切换的互补金属氧化物半导体(CMOS)天线开关的系统,方法和装置
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Application No.: US11857322Application Date: 2007-09-18
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Publication No.: US07890063B2Publication Date: 2011-02-15
- Inventor: Minsik Ahn , Chang-Ho Lee , Changhyuk Cho , Jaejoon Chang , Wangmyong Woo , Haksun Kim , Joy Laskar
- Applicant: Minsik Ahn , Chang-Ho Lee , Changhyuk Cho , Jaejoon Chang , Wangmyong Woo , Haksun Kim , Joy Laskar
- Applicant Address: KR US GA Atlanta
- Assignee: Samsung Electro-Mechanics,Georgia Tech Research Corporation
- Current Assignee: Samsung Electro-Mechanics,Georgia Tech Research Corporation
- Current Assignee Address: KR US GA Atlanta
- Agency: Sutherland Asbill & Brennan LLP
- Main IPC: H04B1/44
- IPC: H04B1/44

Abstract:
Embodiments of the invention may provide for a CMOS antenna switch, which may be referred to as a CMOS SP4T switch. The CMOS antenna switch may operate at a plurality of frequencies, perhaps around 900 MHz and 1.9 GHz according to an embodiment of the invention. The CMOS antenna switch may include both a receiver switch and a transmit switch. The receiver switch may utilize a multi-stack transistor with body substrate tuning to block high power signals from the transmit path as well as to maintain low insertion loss at the receiver path. On the other hand, in the transmit switch, a body substrate tuning technique may be applied to maintain high power delivery to the antenna. Example embodiments of the CMOS antenna switch may provide for 31 dBm P 1 dB at both bands (e.g., 900 MHz and 1.8 GHz). In addition, a 0.9 dB and −1.1 dB insertion loss at 900 MHz and 1.9 GHz, respectively, may be obtained according to example embodiments of the invention.
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