Invention Grant
US07890906B2 Method of laying out integrated circuit design based on known polysilicon perimeter densities of individual cells 有权
基于单个电池的已知多晶硅周边密度布置集成电路设计的方法

Method of laying out integrated circuit design based on known polysilicon perimeter densities of individual cells
Abstract:
Disclosed is a method of laying out individual cells of an integrated circuit design, based at least in part on the known polysilicon perimeter densities of those cells. That is, the method embodiments use the knowledge of polysilicon perimeter density for known cells to drive placement of those cells on a chip (i.e., to drive floor-planning). The method embodiments can be used to achieve approximately uniform across-chip polysilicon perimeter density and, thereby to limit performance parameter variations between functional devices that are attributable to variations in polysilicon perimeter density. Alternatively, the method embodiments can be used to selectively control variations in the average polysilicon perimeter density of different regions of a chip and, thereby to selectively control certain performance parameter variations between functional devices located in those different regions.
Information query
Patent Agency Ranking
0/0