Invention Grant
- Patent Title: Vapor deposition methods for forming a metal-containing layer on a substrate
- Patent Title (中): 在基板上形成含金属层的气相沉积方法
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Application No.: US11705992Application Date: 2007-02-14
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Publication No.: US07892964B2Publication Date: 2011-02-22
- Inventor: Bhaskar Srinivasan , John Smythe
- Applicant: Bhaskar Srinivasan , John Smythe
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- Main IPC: H01L21/4763
- IPC: H01L21/4763
Abstract:
Atomic layer deposition methods as described herein can be advantageously used to form a metal-containing layer on a substrate. For example, certain methods as described herein can form a strontium titanate layer that has low carbon content (e.g., low strontium carbonate content), which can result in layer with a high dielectric constant.
Public/Granted literature
- US20080194088A1 Vapor deposition methods for forming a metal-containing layer on a substrate Public/Granted day:2008-08-14
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