Invention Grant
- Patent Title: Microwave plasma processing apparatus
- Patent Title (中): 微波等离子体处理装置
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Application No.: US11576852Application Date: 2005-10-06
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Publication No.: US07895971B2Publication Date: 2011-03-01
- Inventor: Caizhong Tian , Toshihisa Nozawa
- Applicant: Caizhong Tian , Toshihisa Nozawa
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2004-294997 20041007
- International Application: PCT/JP2005/018545 WO 20051006
- International Announcement: WO2006/038672 WO 20060413
- Main IPC: C23C16/00
- IPC: C23C16/00 ; C23C14/00 ; C23F1/00 ; H01L21/306

Abstract:
A microwave plasma processing apparatus which easily ensures uniformity and stability of plasma in response to changes of process conditions and the like. The microwave plasma processing apparatus generates plasma of a process gas in a chamber by microwave and performs plasma processing to a work to be processed by using the plasma. On a plate composed of a conductor covering the outer circumference of a microwave transmitting board, two or more holes for propagating microwave from an edge part of the microwave transmitting board to an inner part of the plate are formed. Volume adjusting mechanisms and adjust the volume of the holes to adjust impedance of each unit when the microwave transmitting board is divided into individual units to which each of the holes belongs, and electric field distribution of the microwave transmitting board is controlled.
Public/Granted literature
- US20070283887A1 Microwave Plasma Processing Apparatus Public/Granted day:2007-12-13
Information query
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