Invention Grant
US07896965B2 Method for the production of a plurality of optoelectronic semiconductor chips and optoelectronic semiconductor chip 有权
制造多个光电子半导体芯片和光电子半导体芯片的方法

  • Patent Title: Method for the production of a plurality of optoelectronic semiconductor chips and optoelectronic semiconductor chip
  • Patent Title (中): 制造多个光电子半导体芯片和光电子半导体芯片的方法
  • Application No.: US10566521
    Application Date: 2004-07-22
  • Publication No.: US07896965B2
    Publication Date: 2011-03-01
  • Inventor: Volker Härle
  • Applicant: Volker Härle
  • Applicant Address: DE Regensburg
  • Assignee: OSRAM Opto Semiconductors GmbH
  • Current Assignee: OSRAM Opto Semiconductors GmbH
  • Current Assignee Address: DE Regensburg
  • Agency: Cohen Pontani Lieberman & Pavane LLP
  • Priority: DE10335081 20030731
  • International Application: PCT/DE2004/001594 WO 20040722
  • International Announcement: WO2005/013316 WO 20050210
  • Main IPC: C30B25/04
  • IPC: C30B25/04
Method for the production of a plurality of optoelectronic semiconductor chips and optoelectronic semiconductor chip
Abstract:
A method for the production of a plurality of optoelectronic semiconductor chips each having a plurality of structural elements with respectively at least one semiconductor layer. The method involves providing a chip composite base having a substrate and a growth surface. A non-closed mask material layer is grown onto the growth surface in such a way that the mask material layer has a plurality of statistically distributed windows having varying forms and/or opening areas, a mask material being chosen in such a way that a semiconductor material of the semiconductor layer that is to be grown in a later method step essentially cannot grow on said mask material or can grow in a substantially worse manner in comparison with the growth surface. Subsequently, semiconductor layers are deposited essentially simultaneously onto regions of the growth surface that lie within the windows. A further method step is singulation of the chip composite base with applied material to form semiconductor chips. An optoelectronic semiconductor component is produced according to the method.
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