Invention Grant
US07896967B2 Gas supply system, substrate processing apparatus and gas supply method
有权
气体供应系统，基板处理装置和供气方式
- Patent Title: Gas supply system, substrate processing apparatus and gas supply method
- Patent Title (中): 气体供应系统，基板处理装置和供气方式
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Application No.: US11671115Application Date: 2007-02-05
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Publication No.: US07896967B2Publication Date: 2011-03-01
- Inventor: Shinichiro Hayasaka , Ken Horiuchi , Fumiko Yagi , Takeshi Yokouchi
- Applicant: Shinichiro Hayasaka , Ken Horiuchi , Fumiko Yagi , Takeshi Yokouchi
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2006-028566 20060206
- Main IPC: C23C16/52
- IPC: C23C16/52 ; H01L21/306
Abstract:
A gas supply system for supplying a gas into a processing chamber for processing a substrate to be processed includes: a processing gas supply unit; a processing gas supply line; a first and a second branch line; a branch flow control unit; an additional gas supply unit; an additional gas supply line; and a control unit. The control unit performs, before processing the substrate to be processed, a processing gas supply control and an additional gas supply control by using the processing gas supply unit and the additional gas supply unit, respectively, wherein the additional gas supply control includes a control that supplies the additional gas at an initial flow rate greater than a set flow rate and then at the set flow rate after a lapse of a period of time.
Public/Granted literature
- US20070181255A1 GAS SUPPLY SYSTEM, SUBSTRATE PROCESSING APPARATUS AND GAS SUPPLY METHOD Public/Granted day:2007-08-09
Information query
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