Invention Grant
- Patent Title: Apparatus and method for regional plasma control
- Patent Title (中): 用于区域等离子体控制的装置和方法
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Application No.: US11553590Application Date: 2006-10-27
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Publication No.: US07897008B2Publication Date: 2011-03-01
- Inventor: Shih Ming Chang , Chi-Lun Lu
- Applicant: Shih Ming Chang , Chi-Lun Lu
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: C23F1/00
- IPC: C23F1/00
Abstract:
An apparatus for controlling a plasma etching process includes plasma control structure that can vary a size of a plasma flow passage, vary a speed of plasma flowing through the plasma flow passage, vary plasma concentration flowing through the plasma flow passage, or a combination thereof.
Public/Granted literature
- US20080100214A1 Apparatus and Method For Regional Plasma Control Public/Granted day:2008-05-01
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