Invention Grant
- Patent Title: Amorphous transparent conductive film, sputtering target as its raw material, amorphous transparent electrode substrate, process for producing the same and color filter for liquid crystal display
- Patent Title (中): 非晶透明导电膜,溅射靶为原料,非晶透明电极基板,其制造方法和液晶显示器用滤色片
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Application No.: US10557194Application Date: 2004-04-19
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Publication No.: US07897067B2Publication Date: 2011-03-01
- Inventor: Kazuyoshi Inoue
- Applicant: Kazuyoshi Inoue
- Applicant Address: JP Tokyo
- Assignee: Idemitsu Kosan Co., Ltd.
- Current Assignee: Idemitsu Kosan Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2003-141429 20030520; JP2003-370357 20031030
- International Application: PCT/JP2004/005545 WO 20040419
- International Announcement: WO2004/105054 WO 20041202
- Main IPC: H01B1/08
- IPC: H01B1/08 ; H01B13/00 ; H01B5/14 ; C23C14/08 ; C23C14/34

Abstract:
A transparent conductive film of low resistivity excelling in transparency and etching properties; a sputtering target as its raw material; an amorphous transparent electrode substrate having the transparent conductive film superimposed on a substrate; and a process for producing the same. In particular, an amorphous transparent conductive film comprising at least indium oxide and zinc oxide, which contains at least one third metal selected from among Re, Nb, W, Mo and Zr and satisfies the formulae: 0.75≦[In]/([In]+[Zn])≦0.95 (1) 1.0×10−4≦[M]/([In]+[Zn]+[M])≦1.0×10−2 (2) wherein [In][Zn] and [M] represent the atomicity of In, atomicity of Zn and atomicity of third metal, respectively. This amorphous transparent conductive film exhibits amorphism ensuring excellent etching processability and exhibits low specific resistance and high mobility.
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