Invention Grant
- Patent Title: Ultrathin ferromagnetic/antiferromagnetic coupling film structure and fabrication method thereof
- Patent Title (中): 超薄铁磁/反铁磁耦合膜结构及其制造方法
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Application No.: US12183164Application Date: 2008-07-31
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Publication No.: US07897200B2Publication Date: 2011-03-01
- Inventor: Jyh-Shen Tsay , Chi-Wei Lee , Gung Chern
- Applicant: Jyh-Shen Tsay , Chi-Wei Lee , Gung Chern
- Applicant Address: TW
- Assignee: National Chung Cheng University
- Current Assignee: National Chung Cheng University
- Current Assignee Address: TW
- Agency: Schmeiser, Olsen & Watts, LLP
- Priority: TW96141973A 20071107
- Main IPC: G11B21/00
- IPC: G11B21/00 ; G11B5/33 ; B05D1/18 ; B32B7/02 ; C25D3/12 ; C25D3/00 ; G11C19/08 ; B22F3/00 ; C23C8/10
Abstract:
The present invention provides a ferromagnetic/antiferromagnetic coupling film structure and a fabrication method thereof. The structure includes an antiferromagnetic layer of cobalt oxide having a thickness of 2 to 15 monolayers and formed on a substrate at a temperature ranging from 700K to 900K; and a ferromagnetic layer of cobalt having a thickness of at least one monolayer for being formed on the antiferromagnetic layer of cobalt oxide.
Public/Granted literature
- US20090117355A1 ULTRATHIN FERROMAGNETIC/ANTIFERROMAGNETIC COUPLING FILM STRUCTURE AND FABRICATION METHOD THEREOF Public/Granted day:2009-05-07
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