Invention Grant
US07897308B2 Method for transferring a predetermined pattern reducing proximity effects
有权
用于传送预定图案以减少邻近效应的方法
- Patent Title: Method for transferring a predetermined pattern reducing proximity effects
- Patent Title (中): 用于传送预定图案以减少邻近效应的方法
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Application No.: US12226973Application Date: 2006-05-05
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Publication No.: US07897308B2Publication Date: 2011-03-01
- Inventor: Laurent Pain , Serdar Manakli , Georges Bervin
- Applicant: Laurent Pain , Serdar Manakli , Georges Bervin
- Applicant Address: FR Paris US TX Austin
- Assignee: Commissariat a l'Energie Atomique,Freescale Semiconductor, Inc.
- Current Assignee: Commissariat a l'Energie Atomique,Freescale Semiconductor, Inc.
- Current Assignee Address: FR Paris US TX Austin
- Agency: Oliff & Berridge, PLC
- International Application: PCT/IB2006/001670 WO 20060505
- International Announcement: WO2007/129135 WO 20071115
- Main IPC: G03F9/00
- IPC: G03F9/00 ; G03C5/00

Abstract:
A method for transferring a predetermined pattern onto a flat support performed by direct writing by means of a particle beam comprises at least: deposition of a photoresist layer on a free surface of the support, application of the beam on exposed areas of the photoresist layer, performing correction by modulation of exposure doses received by each exposed area, developing of the photoresist layer so as to form said pattern. Correction further comprises determination of a substitution pattern (11) comprising at least one subresolution feature and use of the substitution pattern (11) for determining the areas to be exposed when the electron beam is applied. In addition, modulation takes account of the density of the substitution pattern (11) near to each exposed area.
Public/Granted literature
- US20090162789A1 Method for Transferring a Predetermined Pattern Reducing Proximity Effects Public/Granted day:2009-06-25
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