Invention Grant
US07897321B2 Monomer, resin, resist composition using the resin, and method producing semiconductor device using the resist composition
有权
使用该树脂的单体，树脂，抗蚀剂组合物，以及使用该抗蚀剂组合物的半导体装置的制造方法
- Patent Title: Monomer, resin, resist composition using the resin, and method producing semiconductor device using the resist composition
- Patent Title (中): 使用该树脂的单体，树脂，抗蚀剂组合物，以及使用该抗蚀剂组合物的半导体装置的制造方法
-
Application No.: US12360292Application Date: 2009-01-27
-
Publication No.: US07897321B2Publication Date: 2011-03-01
- Inventor: Koji Nozaki
- Applicant: Koji Nozaki
- Applicant Address: JP Kawasaki
- Assignee: Fujitsu Limited
- Current Assignee: Fujitsu Limited
- Current Assignee Address: JP Kawasaki
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2008-016296 20080128
- Main IPC: G03F7/039
- IPC: G03F7/039 ; G03F7/20 ; G03F7/30 ; C08F28/06 ; C07D335/02
Abstract:
A monomer, which is represented by General Formula I: wherein, each of R1 and R3 is either —H group or —CH3 group, and R1 and R3 are identical or different to each other; R2 is either a phenyl group or an adamanthyl group; and Q1 is a C1-4 perfluoroalkyl group.
Public/Granted literature
Information query
IPC分类:
