Invention Grant
- Patent Title: Methods of making a ferroelectric memory device having improved interfacial characteristics
- Patent Title (中): 制备具有改善的界面特性的铁电存储器件的方法
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Application No.: US11938956Application Date: 2007-11-13
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Publication No.: US07897413B2Publication Date: 2011-03-01
- Inventor: Wensheng Wang , Yoshimasa Horii
- Applicant: Wensheng Wang , Yoshimasa Horii
- Applicant Address: JP Yokohama
- Assignee: Fujitsu Semiconductor Limited
- Current Assignee: Fujitsu Semiconductor Limited
- Current Assignee Address: JP Yokohama
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2006-308160 20061114
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/8242 ; H01L21/02 ; H01L27/108 ; H01L29/94
Abstract:
The present invention provides a method for manufacturing a semiconductor device, including the steps of: forming a ferroelectric film on a first conductive film by a sol-gel method; forming a first conductive metal oxide film on the ferroelectric film; carrying out a first annealing on the first conductive metal oxide film; forming a second conductive metal oxide film on the first conductive metal oxide film, so that the first and second conductive films serve as a second conductive film; and forming a capacitor by patterning the first conductive film, the ferroelectric film and the second conductive film. In the step of forming the first conductive metal oxide film, ferroelectric characteristics are adjusted with a flow rate ratio of oxygen by utilizing the fact that the ferroelectric characteristics of the ferroelectric film improve as the flow rate ratio of oxygen in a sputtering gas increases.
Public/Granted literature
- US20080261332A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2008-10-23
Information query
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