Invention Grant
- Patent Title: Method of making semiconductor package with plated connection
- Patent Title (中): 制造具有电镀连接的半导体封装的方法
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Application No.: US12154537Application Date: 2008-05-22
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Publication No.: US07897438B2Publication Date: 2011-03-01
- Inventor: Leeshawn Luo , Kai Liu , Ming Sun , Xiao Tian Zhang
- Applicant: Leeshawn Luo , Kai Liu , Ming Sun , Xiao Tian Zhang
- Applicant Address: US CA Sunnyvale
- Assignee: Alpha and Omega Semiconductor Incorporated
- Current Assignee: Alpha and Omega Semiconductor Incorporated
- Current Assignee Address: US CA Sunnyvale
- Agency: Van Pelt, Yi & James LLP
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A semiconductor package and method for making a semiconductor package are disclosed. The semiconductor package has a top surface and a mounting surface and includes a die, a conducting connecting material, a plating material and an insulating material. The die has a processed surface facing towards the mounting surface of the semiconductor package. Exposed metal connections are at the processed surface of the die. The conducting connecting material is disposed on the exposed metal connections. The plating material is in contact with the conducting connecting material. The insulating material is formed around the conducting connecting material, and the plating material extends to the exterior of the insulating material.
Public/Granted literature
- US20080233679A1 Semiconductor package with plated connection Public/Granted day:2008-09-25
Information query
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